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Datasheets for ENHANC

Datasheets found :: 8395
Page: | 117 | 118 | 119 | 120 | 121 | 122 | 123 | 124 | 125 |
No. Part Name Description Manufacturer
3601 IRF612 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3602 IRF612 MOSPOWER N-Channel Enhancement Mode Transistor 200V 2A Siliconix
3603 IRF613 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
3604 IRF613 MOSPOWER N-Channel Enhancement Mode Transistor 150V 2A Siliconix
3605 IRF620 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3606 IRF620 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3607 IRF620 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3608 IRF620 MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A Siliconix
3609 IRF620FI N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3610 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS SGS Thomson Microelectronics
3611 IRF621 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
3612 IRF621 MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A Siliconix
3613 IRF622 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3614 IRF622 MOSPOWER N-Channel Enhancement Mode Transistor 200V 4A Siliconix
3615 IRF623 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
3616 IRF623 MOSPOWER N-Channel Enhancement Mode Transistor 150V 4A Siliconix
3617 IRF630 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
3618 IRF630 MOSPOWER N-Channel Enhancement Mode Transistor 200V 9A Siliconix
3619 IRF631 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
3620 IRF631 MOSPOWER N-Channel Enhancement Mode Transistor 150V 9A Siliconix
3621 IRF632 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
3622 IRF632 MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A Siliconix
3623 IRF633 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
3624 IRF633 MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A Siliconix
3625 IRF640 MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A Siliconix
3626 IRF640-D Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
3627 IRF641 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
3628 IRF641 MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A Siliconix
3629 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
3630 IRF642 MOSPOWER N-Channel Enhancement Mode Transistor 200V 16A Siliconix


Datasheets found :: 8395
Page: | 117 | 118 | 119 | 120 | 121 | 122 | 123 | 124 | 125 |



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