| No. |
Part Name |
Description |
Manufacturer |
| 3541 |
2N6499 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
| 3542 |
2N6499 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
| 3543 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 3544 |
2N6500 |
HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS |
General Electric Solid State |
| 3545 |
2N6515 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3546 |
2N6515 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 3547 |
2N6515 |
High Voltage Transistors |
ON Semiconductor |
| 3548 |
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3549 |
2N6515-D |
High Voltage Transistors |
ON Semiconductor |
| 3550 |
2N6515RLRM |
High Voltage Transistors |
ON Semiconductor |
| 3551 |
2N6516 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3552 |
2N6516 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3553 |
2N6517 |
NPN Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3554 |
2N6517 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 3555 |
2N6517 |
High Voltage Transistors |
ON Semiconductor |
| 3556 |
2N6517 |
High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 3557 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
| 3558 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
| 3559 |
2N6518 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3560 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 3561 |
2N6519 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3562 |
2N6519 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 3563 |
2N6519 |
High Voltage Transistors |
ON Semiconductor |
| 3564 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 3565 |
2N6519RLRA |
High Voltage Transistors |
ON Semiconductor |
| 3566 |
2N6520 |
PNP Epitaxial Silicon Transistor - High Voltage Transistor |
Fairchild Semiconductor |
| 3567 |
2N6520 |
High Voltage Transistor 625mW |
Micro Commercial Components |
| 3568 |
2N6520 |
High Voltage Transistors |
ON Semiconductor |
| 3569 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 3570 |
2N6520RL1 |
High Voltage Transistors |
ON Semiconductor |
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