No. |
Part Name |
Description |
Manufacturer |
3481 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
3482 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
3483 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
3484 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
3485 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
3486 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
3487 |
2N6304 |
NPN silicon high frequency transistor 1.4GHz - 10mAdc |
Motorola |
3488 |
2N6305 |
NPN silicon high frequency transistor 1.2GHz - 10mAdc |
Motorola |
3489 |
2N6306 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
3490 |
2N6307 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
3491 |
2N6308 |
8A high-voltage NPN silicon 125W power NPN transistor |
Motorola |
3492 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3493 |
2N6322 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3494 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3495 |
2N6324 |
200 V, 30 A NPN high voltage/high energy |
Solid State Devices Inc |
3496 |
2N6338 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3497 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
3498 |
2N6338 |
High Power NPN Silicon Transistor |
ON Semiconductor |
3499 |
2N6338-D |
High-Power NPN Silicon Transistors |
ON Semiconductor |
3500 |
2N6338A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3501 |
2N6339 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3502 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
3503 |
2N6339A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3504 |
2N6340 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3505 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
3506 |
2N6340A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3507 |
2N6341 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3508 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
3509 |
2N6341A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3510 |
2N6371 |
40V high power silicon NPN transistor |
Comset Semiconductors |
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