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Datasheets for IGH

Datasheets found :: 186144
Page: | 113 | 114 | 115 | 116 | 117 | 118 | 119 | 120 | 121 |
No. Part Name Description Manufacturer
3481 2N6282 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
3482 2N6283 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
3483 2N6284 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
3484 2N6285 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. General Electric Solid State
3485 2N6286 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. General Electric Solid State
3486 2N6287 20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. General Electric Solid State
3487 2N6304 NPN silicon high frequency transistor 1.4GHz - 10mAdc Motorola
3488 2N6305 NPN silicon high frequency transistor 1.2GHz - 10mAdc Motorola
3489 2N6306 8A high-voltage NPN silicon 125W power NPN transistor Motorola
3490 2N6307 8A high-voltage NPN silicon 125W power NPN transistor Motorola
3491 2N6308 8A high-voltage NPN silicon 125W power NPN transistor Motorola
3492 2N6322 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3493 2N6322 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3494 2N6324 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3495 2N6324 200 V, 30 A NPN high voltage/high energy Solid State Devices Inc
3496 2N6338 HIGH-POWER NPN SILICON TRANSISTORS Boca Semiconductor Corporation
3497 2N6338 25A 200W high-power NPN silicon transistor Motorola
3498 2N6338 High Power NPN Silicon Transistor ON Semiconductor
3499 2N6338-D High-Power NPN Silicon Transistors ON Semiconductor
3500 2N6338A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
3501 2N6339 HIGH-POWER NPN SILICON TRANSISTORS Boca Semiconductor Corporation
3502 2N6339 25A 200W high-power NPN silicon transistor Motorola
3503 2N6339A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
3504 2N6340 HIGH-POWER NPN SILICON TRANSISTORS Boca Semiconductor Corporation
3505 2N6340 25A 200W high-power NPN silicon transistor Motorola
3506 2N6340A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
3507 2N6341 HIGH-POWER NPN SILICON TRANSISTORS Boca Semiconductor Corporation
3508 2N6341 25A 200W high-power NPN silicon transistor Motorola
3509 2N6341A NPN High Power Silicon General Purpose Epibase Transistor - metal case IPRS Baneasa
3510 2N6371 40V high power silicon NPN transistor Comset Semiconductors


Datasheets found :: 186144
Page: | 113 | 114 | 115 | 116 | 117 | 118 | 119 | 120 | 121 |



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