No. |
Part Name |
Description |
Manufacturer |
3511 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
3512 |
2N6371 |
High Power General Purpose NPN Transistor - metal case |
IPRS Baneasa |
3513 |
2N6420 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
3514 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
3515 |
2N6420 |
Complementary Medium-Power High Voltage Power Transistor 35W 1A |
Motorola |
3516 |
2N6421 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
3517 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
3518 |
2N6421 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
3519 |
2N6422 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
3520 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
3521 |
2N6422 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
3522 |
2N6423 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS |
Boca Semiconductor Corporation |
3523 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
3524 |
2N6423 |
Complementary Medium-Power High Voltage Power Transistor 35W 2A |
Motorola |
3525 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3526 |
2N6436A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3527 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3528 |
2N6437-D |
High-Power PNP Silicon Transistors |
ON Semiconductor |
3529 |
2N6437A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3530 |
2N6438 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
3531 |
2N6438A |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3532 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
3533 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
3534 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
3535 |
2N6496 |
High current, high power, high speed silicon N-P-N planar transistor. |
General Electric Solid State |
3536 |
2N6497 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
3537 |
2N6497 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
3538 |
2N6497-D |
High Voltage NPN Silicon Power Transistors |
ON Semiconductor |
3539 |
2N6498 |
HIGH VOLTAGE NPN SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
3540 |
2N6498 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
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