| No. |
Part Name |
Description |
Manufacturer |
| 3391 |
2N5911 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 3392 |
2N5911 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 3393 |
2N5911 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 3394 |
2N5911 |
Matched High Gain |
Vishay |
| 3395 |
2N5911-12 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 3396 |
2N5911_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 3397 |
2N5911_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 3398 |
2N5912 |
Dual N-Channel JFET High Frequency Amplifier |
Calogic |
| 3399 |
2N5912 |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 3400 |
2N5912 |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 3401 |
2N5912 |
Matched High Gain |
Vishay |
| 3402 |
2N5912C |
Wideband, High Gain, Monolithic Dual, N- Channel JFET |
Linear Systems |
| 3403 |
2N5912_D |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 3404 |
2N5912_W |
Dual N-channel JFET. High frequency amplifier. |
Intersil |
| 3405 |
2N5914 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 3406 |
2N5915 |
High-Power Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 3407 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 3408 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 3409 |
2N5918 |
10W, 400-MHz High-Gain Silicon NPN Emitter-Ballasted Overaly RF Transistor |
RCA Solid State |
| 3410 |
2N5943 |
NPN silicon high frequency transistor 1.2GHz - 50mAdc |
Motorola |
| 3411 |
2N5947 |
PNP silicon high frequency transistor |
Motorola |
| 3412 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3413 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3414 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3415 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3416 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3417 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3418 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3419 |
2N6031 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3420 |
2N6031 |
High-Voltage High-Power Transistors |
ON Semiconductor |
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