| No. |
Part Name |
Description |
Manufacturer |
| 3271 |
2N5551 |
NPN Silicon Transistor (General purpose amplifier High voltage application) |
AUK Corp |
| 3272 |
2N5551 |
NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR |
Boca Semiconductor Corporation |
| 3273 |
2N5551 |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3274 |
2N5551 |
SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
Micro Electronics |
| 3275 |
2N5551 |
NPN high-voltage transistors |
Philips |
| 3276 |
2N5551 |
NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications |
Semtech |
| 3277 |
2N5551C |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3278 |
2N5551S |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3279 |
2N5551SC |
High Voltage Transistor |
Korea Electronics (KEC) |
| 3280 |
2N5564 |
Matched High Gain |
Vishay |
| 3281 |
2N5565 |
Matched High Gain |
Vishay |
| 3282 |
2N5566 |
Matched High Gain |
Vishay |
| 3283 |
2N5575 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3284 |
2N5576 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3285 |
2N5577 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3286 |
2N5578 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3287 |
2N5579 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3288 |
2N5580 |
High-power general purpose NPN transistor, metal case |
IPRS Baneasa |
| 3289 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
| 3290 |
2N5629 |
Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W. |
General Electric Solid State |
| 3291 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 3292 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3293 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3294 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3295 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3296 |
2N5631 |
Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W. |
General Electric Solid State |
| 3297 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3298 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3299 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 3300 |
2N5631 |
Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
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