No. |
Part Name |
Description |
Manufacturer |
3361 |
2N5872B |
PNP High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3362 |
2N5873 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3363 |
2N5873/1 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3364 |
2N5873/2 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3365 |
2N5874 |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3366 |
2N5874A |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3367 |
2N5874B |
NPN High Power Silicon General Purpose Epibase Transistor - metal case |
IPRS Baneasa |
3368 |
2N5879 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3369 |
2N5880 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3370 |
2N5881 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3371 |
2N5882 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3372 |
2N5882-D |
Silicon NPN High-Power Transistor |
ON Semiconductor |
3373 |
2N5883 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3374 |
2N5883 |
25A complementary silicon high-power PNP transistor 200W |
Motorola |
3375 |
2N5883-D |
Complementary Silicon High-Power Transistors |
ON Semiconductor |
3376 |
2N5884 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3377 |
2N5884 |
25A complementary silicon high-power PNP transistor 200W |
Motorola |
3378 |
2N5884 |
COMPLEMENTARY SILICON HIGH POWER TRANSISTORS |
ST Microelectronics |
3379 |
2N5885 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3380 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
3381 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
3382 |
2N5885 |
High-current, high-power, high-speed power transistor. 60V, 200W. |
General Electric Solid State |
3383 |
2N5885 |
25A complementary silicon high-power NPN transistor 200W |
Motorola |
3384 |
2N5886 |
COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
3385 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
3386 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
3387 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
3388 |
2N5886 |
25A complementary silicon high-power NPN transistor 200W |
Motorola |
3389 |
2N5886 |
HIGH CURRENT SILICON NPN POWER TRANSISTOR |
SGS Thomson Microelectronics |
3390 |
2N5886 |
COMPLEMENTARY SILICON HIGH POWER TRANSISTOR |
ST Microelectronics |
| | | |