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Datasheets for IGH

Datasheets found :: 186144
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |
No. Part Name Description Manufacturer
3301 2N5631 High-Voltage High-Power Transistors ON Semiconductor
3302 2N5631 High-Voltage High-Power Transistors ON Semiconductor
3303 2N5631-D High-Voltage - High Power Transistors ON Semiconductor
3304 2N5631-D High-Voltage - High Power Transistors ON Semiconductor
3305 2N5632 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
3306 2N5632 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
3307 2N5633 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
3308 2N5633 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
3309 2N5634 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
3310 2N5634 10A complementary silicon high-voltage, high-power NPN transistor 150W Motorola
3311 2N5655 Plastic NPN Silicon High-Voltage Power Transistor ON Semiconductor
3312 2N5655-D Plastic NPN Silicon High-Voltage Power Transistor ON Semiconductor
3313 2N5659 HIGH SPEED NPN TRANSISTOR 120 VOLTS Solid State Devices Inc
3314 2N5664SMD NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS SemeLAB
3315 2N5671 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3316 2N5671 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3317 2N5671 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3318 2N5672 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3319 2N5672 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3320 2N5672 High-current, high-power, high-speed silicon N-P-N planar transistor. General Electric Solid State
3321 2N5679 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS Boca Semiconductor Corporation
3322 2N5679 10.000W High Voltage PNP Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
3323 2N5680 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS Boca Semiconductor Corporation
3324 2N5680 10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
3325 2N5681 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS Boca Semiconductor Corporation
3326 2N5681 10.000W High Voltage NPN Metal Can Transistor. 100V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
3327 2N5682 PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS Boca Semiconductor Corporation
3328 2N5682 10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. Continental Device India Limited
3329 2N5683 50A complementary silicon high-current, power PNP transistor 300W Motorola
3330 2N5684 50A complementary silicon high-current, power PNP transistor 300W Motorola


Datasheets found :: 186144
Page: | 107 | 108 | 109 | 110 | 111 | 112 | 113 | 114 | 115 |



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