| No. |
Part Name |
Description |
Manufacturer |
| 3631 |
2SC2756 |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 3632 |
2SC2756R |
NPN silicon epitaxial transistor, VHF mixer |
NEC |
| 3633 |
2SC2757 |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 3634 |
2SC2757R |
NPN silicon epitaxial transistor for UHF/VHF oscillator and VHF mixer |
NEC |
| 3635 |
2SC2759R |
NPN silicon epitaxial transistor for UHF/VHF mixer, UHF oscillator |
NEC |
| 3636 |
2SC2776 |
Silicon NPN Epitaxial Planar |
Hitachi Semiconductor |
| 3637 |
2SC2780 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3638 |
2SC2782 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF BAND POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3639 |
2SC2797 |
NPN epitaxial planar RF power UHF transistor 5W 24V |
Mitsubishi Electric Corporation |
| 3640 |
2SC2798 |
NPN epitaxial planar RF power UHF transistor 12W 24V |
Mitsubishi Electric Corporation |
| 3641 |
2SC2799 |
NPN epitaxial planar RF power UHF transistor 25W 24V |
Mitsubishi Electric Corporation |
| 3642 |
2SC2800 |
NPN SPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3643 |
2SC2805 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 3644 |
2SC2806 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 3645 |
2SC280H |
Silicon NPN Epitaxial LTP Twin Transistor, intended for use in DC Amplifier |
Hitachi Semiconductor |
| 3646 |
2SC281 |
Silicon NPN Epitaxial LTP Transistor Vcbo=30V, Pc=200mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 3647 |
2SC2814 |
NPN Epitaxial Planar Silicon Transistor High-Friquency General-Purpose Amplifier Applications |
SANYO |
| 3648 |
2SC281H |
Silicon NPN Epitaxial LTP Transistor, intended for use in Audio Frequency Small Signal Amplifier |
Hitachi Semiconductor |
| 3649 |
2SC2824 |
SILICON NPN EPITAXIAL TYPE(PCT PROCESS) |
TOSHIBA |
| 3650 |
2SC282H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 3651 |
2SC283 |
Silicon NPN Epitaxial LTP Transistor Vcbo=50V, Pc=350mW, intended for use in Audio Frequency Small Signal Amplifier, 27 Transceiver Power Output |
Hitachi Semiconductor |
| 3652 |
2SC2839 |
NPN Epitaxial Planar Silicon Transistor HF Amplifier Applications |
SANYO |
| 3653 |
2SC283H |
Silicon NPN Epitaxial LTP Transistor, intended for use in RF Amplifier |
Hitachi Semiconductor |
| 3654 |
2SC2840 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 3655 |
2SC2845 |
SILICON NPN EPITAXIAL PLANAR |
Panasonic |
| 3656 |
2SC284H |
Silicon NPN Epitaxial LTP, intended for use in Medium Speed Switching, High Voltage Switching |
Hitachi Semiconductor |
| 3657 |
2SC2853 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 3658 |
2SC2854 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 3659 |
2SC2855 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 3660 |
2SC2856 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
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