| No. |
Part Name |
Description |
Manufacturer |
| 3751 |
2SC3143 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications |
SANYO |
| 3752 |
2SC3144 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/3A for High-Speed Drivers Applications |
SANYO |
| 3753 |
2SC3145 |
NPN Epitaxial Planar Silicon Darlington Transistors 60V/5A for High-Speed Drivers Applications |
SANYO |
| 3754 |
2SC3147 |
NPN EPITAXIAL (VHF BAND POWER AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 3755 |
2SC3172 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 3756 |
2SC3173 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 3757 |
2SC3173 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 3758 |
2SC3175 |
NPN Epitaxial Planar Type Silicon Transistor |
SANYO |
| 3759 |
2SC3198L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 3760 |
2SC3199 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
| 3761 |
2SC3199L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
| 3762 |
2SC3200 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 3763 |
2SC3201 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 3764 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 3765 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 3766 |
2SC3203 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 3767 |
2SC3206 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
| 3768 |
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE |
NEC |
| 3769 |
2SC321H |
Silicon NPN Epitaxial Planar Transistor, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 3770 |
2SC3225 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE SWITCHING APPLICATIONS SOLENOID DRIVE APPLICATIONS |
TOSHIBA |
| 3771 |
2SC3239 |
Silicon NPN epitaxial high current switching transistor |
TOSHIBA |
| 3772 |
2SC3242 |
900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 |
Isahaya Electronics Corporation |
| 3773 |
2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A |
Isahaya Electronics Corporation |
| 3774 |
2SC3243 |
900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 |
Isahaya Electronics Corporation |
| 3775 |
2SC3244 |
900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 |
Isahaya Electronics Corporation |
| 3776 |
2SC3245 |
900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 |
Isahaya Electronics Corporation |
| 3777 |
2SC3245A |
900mW Lead frame NPN transistor, maximum rating: 150V Vceo, 100mA Ic, 150 to 500 hFE. Complementary 2SA1285A |
Isahaya Electronics Corporation |
| 3778 |
2SC3246 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1.5A Ic, 400 to 3000 hFE. Complementary 2SA1286 |
Isahaya Electronics Corporation |
| 3779 |
2SC3247 |
FOR RELAY DRIVE POWER SUPPLY APPLICAITON SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 3780 |
2SC3253 |
NPN Epitaxial Planar Silicon Transistors 60V/5A High-Speed Switching Applications |
SANYO |
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