| No. |
Part Name |
Description |
Manufacturer |
| 3661 |
2SC2859 |
Transistor Silicon NPN Epitaxial (PCT process) Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications |
TOSHIBA |
| 3662 |
2SC2860 |
Si NPN Epitaxial Planar |
Panasonic |
| 3663 |
2SC2868 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 3664 |
2SC2873 |
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Power Switching Applications |
TOSHIBA |
| 3665 |
2SC2876 |
Silicon NPN epitaxial planar transistor |
TOSHIBA |
| 3666 |
2SC2877 |
Silicon NPN epitaxial planar audio frequency power transistor |
TOSHIBA |
| 3667 |
2SC2878 |
Transistor Silicon NPN Epitaxial Type For Muting and Switching Applications |
TOSHIBA |
| 3668 |
2SC2879 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) |
TOSHIBA |
| 3669 |
2SC2881 |
Transistor Silicon NPN Epitaxial Type (PCT process) Voltage Amplifier Applications Power Amplifier Applications |
TOSHIBA |
| 3670 |
2SC2882 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications |
TOSHIBA |
| 3671 |
2SC2883 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3672 |
2SC2884 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 3673 |
2SC288A(I*B) |
2SC288A(I·B) NPN silicon epitaxial transistor DISK MOLD for UHF oscillator |
NEC |
| 3674 |
2SC2904 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3675 |
2SC2905 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3676 |
2SC2909 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching AF 60W Predriver Applications |
SANYO |
| 3677 |
2SC2910 |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
| 3678 |
2SC2911 |
NPN Epitaxial Planar Silicon Transistors 160V/140mA High-Voltage Switching and AF 100W Predriver Applications |
SANYO |
| 3679 |
2SC2922 |
Silicon Epitaxial Planar Transistor(GENERAL DESCRIPTION) |
Wing Shing Computer Components |
| 3680 |
2SC2932 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3681 |
2SC2933 |
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE |
Mitsubishi Electric Corporation |
| 3682 |
2SC2946 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 3683 |
2SC29461 |
NPN SILICON EPITAXIAL TRANSISTOR MP-3 |
NEC |
| 3684 |
2SC2954 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
| 3685 |
2SC2960 |
NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications |
SANYO |
| 3686 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 3687 |
2SC2983 |
Transistor Silicon NPN Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications |
TOSHIBA |
| 3688 |
2SC2986 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 3689 |
2SC2987 |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| 3690 |
2SC2987A |
PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR |
Unknow |
| | | |
