| No. |
Part Name |
Description |
Manufacturer |
| 3691 |
P4KE120A |
102.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3692 |
P4KE120A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3693 |
P4KE120C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 108 V, Vbr(max) = 132 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3694 |
P4KE120CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 114 V, Vbr(max) = 126 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3695 |
P4KE130 |
105.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3696 |
P4KE130A |
111.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3697 |
P4KE130A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3698 |
P4KE130C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 117 V, Vbr(max) = 143 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3699 |
P4KE130CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 124 V, Vbr(max) = 137 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3700 |
P4KE150 |
121.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3701 |
P4KE150A |
128.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3702 |
P4KE150A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3703 |
P4KE150C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 135 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3704 |
P4KE150CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 143 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3705 |
P4KE160 |
130.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3706 |
P4KE160A |
136.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3707 |
P4KE160A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3708 |
P4KE160C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 144 V, Vbr(max) = 176 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3709 |
P4KE160CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3710 |
P4KE170 |
138.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3711 |
P4KE170A |
145.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3712 |
P4KE170A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3713 |
P4KE170C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 153 V, Vbr(max) = 187 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3714 |
P4KE170CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3715 |
P4KE180 |
146.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3716 |
P4KE180A |
154.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3717 |
P4KE180A |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3718 |
P4KE180C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3719 |
P4KE180CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3720 |
P4KE200 |
162.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| | | |
