| No. |
Part Name |
Description |
Manufacturer |
| 3721 |
P4KE200A |
171.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3722 |
P4KE200C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 180 V, Vbr(max) = 220 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3723 |
P4KE200CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3724 |
P4KE220 |
175.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3725 |
P4KE220A |
185.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3726 |
P4KE220C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 198 V, Vbr(max) = 242 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3727 |
P4KE220CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 209 V, Vbr(max) = 231 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3728 |
P4KE250 |
202.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3729 |
P4KE250A |
214.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3730 |
P4KE250C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 225 V, Vbr(max) = 275 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3731 |
P4KE250CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 237 V, Vbr(max) = 263 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3732 |
P4KE300 |
243.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3733 |
P4KE300A |
256.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3734 |
P4KE300C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 270 V, Vbr(max) = 330 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3735 |
P4KE300CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 285 V, Vbr(max) = 315 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3736 |
P4KE350 |
284.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3737 |
P4KE350A |
300.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3738 |
P4KE350C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 315 V, Vbr(max) = 385 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3739 |
P4KE350CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 332 V, Vbr(max) = 368 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3740 |
P4KE400 |
324.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3741 |
P4KE400A |
342.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3742 |
P4KE400C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 360 V, Vbr(max) = 440 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3743 |
P4KE400CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 380 V, Vbr(max) = 420 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3744 |
P4KE440 |
356.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3745 |
P4KE440A |
376.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3746 |
P4KE440C |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 396 V, Vbr(max) = 484 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3747 |
P4KE440CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 418 V, Vbr(max) = 462 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3748 |
P4KE530&550 |
TRANSZORB� Transient Voltage Suppressors Steady State Power 1W Peak Pulse Power 300W Breakdown Voltage 530, 550V |
Vishay |
| 3749 |
P4KENN |
TRANSZORB�Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
| 3750 |
P4KENNA |
TRANSZORB�Transient Voltage Suppressors Peak Pulse Power 400W |
Vishay |
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