| No. |
Part Name |
Description |
Manufacturer |
| 3781 |
P6KE15 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3782 |
P6KE150 |
121.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3783 |
P6KE150A |
128.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3784 |
P6KE150C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 135.0 V, Vbr(max) = 165 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3785 |
P6KE150CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 143.0 V, Vbr(max) = 158 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3786 |
P6KE15A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3787 |
P6KE16 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3788 |
P6KE160 |
130.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3789 |
P6KE160A |
136.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3790 |
P6KE160C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 144 V, Vbr(max) = 176 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3791 |
P6KE160CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 152 V, Vbr(max) = 168 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3792 |
P6KE16A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3793 |
P6KE170 |
138.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3794 |
P6KE170A |
145.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3795 |
P6KE170C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 153 V, Vbr(max) = 187 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3796 |
P6KE170CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 179 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3797 |
P6KE18 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3798 |
P6KE180 |
146.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3799 |
P6KE180 |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3800 |
P6KE180A |
154.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3801 |
P6KE180C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 162 V, Vbr(max) = 198 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3802 |
P6KE180CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 171 V, Vbr(max) = 189 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3803 |
P6KE18A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3804 |
P6KE20 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3805 |
P6KE200 |
162.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3806 |
P6KE200A |
171.00V; 1mA ;600W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 3807 |
P6KE200C |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 180 V, Vbr(max) = 220 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3808 |
P6KE200CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 3809 |
P6KE20A |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
| 3810 |
P6KE22 |
TRANSIENT VOLTAGE SUPPRESSOR BREAKDOWN VOLTAGE:6.8-440V PEAK PULSE POWER: 600W |
Shanghai Sunrise Electronics |
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