| No. |
Part Name |
Description |
Manufacturer |
| 3841 |
IRU3055CQTR |
5 Bit Prog 3-Phase SynchBuck CIC |
International Rectifier |
| 3842 |
IS41C44002 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 3843 |
IS41C44004 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 3844 |
IS41LV1665 |
64K x16 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 3845 |
IS41LV1665-40K |
64K x16 bit Dynamic RAM with Fast Page Mode |
Integrated Circuit Solution Inc |
| 3846 |
IS41LV44002 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 3847 |
IS41LV44004 |
4Mx4 bit Dynamic RAM with EDO Page Mode |
Integrated Circuit Solution Inc |
| 3848 |
ISL6307 |
6-Phase PWM Controller with 8 Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current |
Intersil |
| 3849 |
ISL6307A |
Ultra-high bandwidth 6-Phase PWM Controller with 8 Bit VID Code Capable of Precision RDS(ON) or DCR Differential Current Sensing |
Intersil |
| 3850 |
JSFC493 |
4 bit binary counter |
SESCOSEM |
| 3851 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3852 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3853 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3854 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3855 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3856 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3857 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3858 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3859 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3860 |
K1S321615M |
2M x 16 bit Uni-Transistor CMOS RAM Data Sheet |
Samsung Electronic |
| 3861 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3862 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3863 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3864 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3865 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3866 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3867 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
| 3868 |
K4E151611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 3869 |
K4E151611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
| 3870 |
K4E151612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
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