No. |
Part Name |
Description |
Manufacturer |
3871 |
K4E151612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
3872 |
K4E160411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
3873 |
K4E160411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
3874 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
3875 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
3876 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
3877 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
3878 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
3879 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
3880 |
K4E170411D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
3881 |
K4E170411D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
3882 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
3883 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
3884 |
K4E170811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
3885 |
K4E170811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
3886 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
3887 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
3888 |
K4E171611D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
3889 |
K4E171611D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
3890 |
K4E171612D-J |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
3891 |
K4E171612D-T |
1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
3892 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
3893 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
3894 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
3895 |
K4E660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
3896 |
K4F151611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
3897 |
K4F151611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. |
Samsung Electronic |
3898 |
K4F151612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
3899 |
K4F151612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. |
Samsung Electronic |
3900 |
K4F160411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
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