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Datasheets for BIT

Datasheets found :: 16339
Page: | 126 | 127 | 128 | 129 | 130 | 131 | 132 | 133 | 134 |
No. Part Name Description Manufacturer
3871 K4E151612D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
3872 K4E160411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
3873 K4E160411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
3874 K4E160412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
3875 K4E160412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
3876 K4E160811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
3877 K4E160811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. Samsung Electronic
3878 K4E160812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
3879 K4E160812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
3880 K4E170411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
3881 K4E170411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
3882 K4E170412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
3883 K4E170412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
3884 K4E170811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
3885 K4E170811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
3886 K4E170812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
3887 K4E170812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
3888 K4E171611D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
3889 K4E171611D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
3890 K4E171612D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
3891 K4E171612D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
3892 K4E640412D-JC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
3893 K4E640412D-TC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
3894 K4E660412D-JC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. Samsung Electronic
3895 K4E660412D-TC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. Samsung Electronic
3896 K4F151611D-J 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
3897 K4F151611D-T 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle. Samsung Electronic
3898 K4F151612D-J 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
3899 K4F151612D-T 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle. Samsung Electronic
3900 K4F160411D-B 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. Samsung Electronic


Datasheets found :: 16339
Page: | 126 | 127 | 128 | 129 | 130 | 131 | 132 | 133 | 134 |



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