| No. |
Part Name |
Description |
Manufacturer |
| 3901 |
K4F160411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3902 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3903 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3904 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3905 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3906 |
K4F160812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3907 |
K4F160812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3908 |
K4F170411D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 3909 |
K4F170411D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 3910 |
K4F170412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3911 |
K4F170412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3912 |
K4F170811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 3913 |
K4F170811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 3914 |
K4F170812D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3915 |
K4F170812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3916 |
K4F171611D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 3917 |
K4F171611D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 4K refresh cycle. |
Samsung Electronic |
| 3918 |
K4F171612D-J |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3919 |
K4F171612D-T |
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3920 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3921 |
K4F640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 3922 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 3923 |
K4F660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 3924 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 3925 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 3926 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 3927 |
K4R271669B-N(M)CG6 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 3928 |
K4R271669B-N(M)CK7 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 3929 |
K4R271669B-NB(M)CCK8 |
256K x 16/18 bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 3930 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| | | |
