DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for EFFECT

Datasheets found :: 6282
Page: | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 |
No. Part Name Description Manufacturer
4351 IFN5114 P-Channel silicon junction field-effect transistor InterFET Corporation
4352 IFN5115 P-Channel silicon junction field-effect transistor InterFET Corporation
4353 IFN5116 P-Channel silicon junction field-effect transistor InterFET Corporation
4354 IFN5432 N-Channel silicon junction field-effect transistor InterFET Corporation
4355 IFN5433 N-Channel silicon junction field-effect transistor InterFET Corporation
4356 IFN5434 N-Channel silicon junction field-effect transistor InterFET Corporation
4357 IFN5564 N-Channel dual silicon junction field-effect transistor InterFET Corporation
4358 IFN5565 N-Channel dual silicon junction field-effect transistor InterFET Corporation
4359 IFN5566 N-Channel dual silicon junction field-effect transistor InterFET Corporation
4360 IFN5911 N-Channel dual silicon junction field-effect transistor InterFET Corporation
4361 IFN5912 N-Channel dual silicon junction field-effect transistor InterFET Corporation
4362 IFN6449 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
4363 IFN6450 N-Channel Silicon Junction Field-Effect Transistor InterFET Corporation
4364 IFN860 Dual N-Channel silicon junction field-effect transistor InterFET Corporation
4365 IRF120 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. General Electric Solid State
4366 IRF121 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. General Electric Solid State
4367 IRF122 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. General Electric Solid State
4368 IRF123 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. General Electric Solid State
4369 IRF130 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. General Electric Solid State
4370 IRF131 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 56A. General Electric Solid State
4371 IRF132 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 48A. General Electric Solid State
4372 IRF133 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. General Electric Solid State
4373 IRF150 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
4374 IRF151 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 40A. General Electric Solid State
4375 IRF152 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
4376 IRF153 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 33A. General Electric Solid State
4377 IRF220 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
4378 IRF221 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. General Electric Solid State
4379 IRF222 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4380 IRF223 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State


Datasheets found :: 6282
Page: | 142 | 143 | 144 | 145 | 146 | 147 | 148 | 149 | 150 |



© 2024 - www Datasheet Catalog com