No. |
Part Name |
Description |
Manufacturer |
4471 |
IRFD113 |
Power MOSFET field effect power transistor. |
General Electric Solid State |
4472 |
IRFD213 |
(IRFD210) TMOS Field Effect Transistor Dual In-Line Pachage |
Motorola |
4473 |
IRFE230 |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
4474 |
IRFF110 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.5A. |
General Electric Solid State |
4475 |
IRFF110 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
4476 |
IRFF111 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A. |
General Electric Solid State |
4477 |
IRFF112 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. |
General Electric Solid State |
4478 |
IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. |
General Electric Solid State |
4479 |
IRFF113 |
N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. |
Motorola |
4480 |
IRFF120 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. |
General Electric Solid State |
4481 |
IRFF121 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. |
General Electric Solid State |
4482 |
IRFF122 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. |
General Electric Solid State |
4483 |
IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. |
General Electric Solid State |
4484 |
IRFF130 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 8.0A. |
General Electric Solid State |
4485 |
IRFF131 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. |
General Electric Solid State |
4486 |
IRFF132 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A. |
General Electric Solid State |
4487 |
IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. |
General Electric Solid State |
4488 |
IRFF310 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
4489 |
IRFF311 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
4490 |
IRFF312 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
4491 |
IRFF313 |
Power MOSFET field effect power transistor. Drain-source voltage 350 V. |
General Electric Solid State |
4492 |
IRFM250D |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
4493 |
IRFR220 |
N-channel enhancement mode field effect transistor |
Philips |
4494 |
IRFR9024 |
P-Channel Enhancement Mode Field Effect Transistor [Obsolete] |
Fairchild Semiconductor |
4495 |
IRFY240C |
200V Vdss N-Channel FET (field effect transistor) |
SemeLAB |
4496 |
IRFZ42 |
Power Field Effect Transistors |
Motorola |
4497 |
J108 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
4498 |
J109 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
4499 |
J110 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
4500 |
J110A |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
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