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Datasheets for EFFECT

Datasheets found :: 6282
Page: | 145 | 146 | 147 | 148 | 149 | 150 | 151 | 152 | 153 |
No. Part Name Description Manufacturer
4441 IRF633 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
4442 IRF640 OBSOLETE - Power Field Effect Transistor ON Semiconductor
4443 IRF640-D Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate ON Semiconductor
4444 IRF641 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. General Electric Solid State
4445 IRF642 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. General Electric Solid State
4446 IRF720 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
4447 IRF721 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 3.0A. General Electric Solid State
4448 IRF722 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4449 IRF723 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4450 IRF730 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
4451 IRF731 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
4452 IRF732 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4453 IRF733 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4454 IRF820 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4455 IRF821 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. General Electric Solid State
4456 IRF822 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
4457 IRF823 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A. General Electric Solid State
4458 IRF830 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4459 IRF830 Power Field Effect Transistor ON Semiconductor
4460 IRF830 500 V,power field effect transistor TRANSYS Electronics Limited
4461 IRF830-D Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS ON Semiconductor
4462 IRF831 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
4463 IRF832 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4464 IRF833 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
4465 IRF840 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4466 IRF841 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4467 IRF842 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4468 IRF843 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Motorola
4469 IRF9240SMD 200V Vdss P-Channel FET (field effect transistor) SemeLAB
4470 IRFD112 Power MOSFET field effect power transistor. General Electric Solid State


Datasheets found :: 6282
Page: | 145 | 146 | 147 | 148 | 149 | 150 | 151 | 152 | 153 |



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