No. |
Part Name |
Description |
Manufacturer |
451 |
2N5882A |
Trans GP BJT NPN 80V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
452 |
2N5884 |
Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
453 |
2N5884 |
Power 25A 80V Discrete PNP |
ON Semiconductor |
454 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
455 |
2N5884G |
Trans GP BJT PNP 80V 25A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
456 |
2N5886 |
High-current, high-power, high-speed power transistor. 80V, 200W. |
General Electric Solid State |
457 |
2N5886 |
Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
458 |
2N5886 |
Power 25A 80V Discrete NPN |
ON Semiconductor |
459 |
2N5886G |
Trans GP BJT NPN 80V 25A 3-Pin(2+Tab) TO-204 Tray |
New Jersey Semiconductor |
460 |
2N593 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
461 |
2N5954 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
462 |
2N5986 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
463 |
2N5987 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
464 |
2N5988 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
465 |
2N5989 |
Trans GP BJT PNP 80V 6A 3-Pin(2+Tab) TO-66 Sleeve |
New Jersey Semiconductor |
466 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
467 |
2N6036 |
Power 4A 80V PNPD |
ON Semiconductor |
468 |
2N6039 |
Trans Darlington NPN 80V 4A 3-Pin TO-126 Box |
New Jersey Semiconductor |
469 |
2N6039 |
Power 4A 80V NPND |
ON Semiconductor |
470 |
2N6041 |
Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
471 |
2N6044 |
Trans Darlington NPN 80V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
472 |
2N6051 |
Trans Darlington PNP 80V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
473 |
2N6058 |
Trans Darlington NPN 80V 12A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
474 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
475 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
476 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
477 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
478 |
2N6123 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 80V. |
General Electric Solid State |
479 |
2N6123 |
Trans GP BJT NPN 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
480 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
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