| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2N6922 |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 572 |
2N6923 |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 573 |
2N6923A |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 574 |
2N6925 |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 575 |
2N6925A |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 576 |
2N6927 |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 577 |
2N692A |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
| 578 |
2N699 |
0.800W General Purpose NPN Metal Can Transistor. 80V Vceo, 0.500A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 579 |
2N720A |
0.500W Switching NPN Metal Can Transistor. 80V Vceo, A Ic, 20 hFE. |
Continental Device India Limited |
| 580 |
2N720A |
Trans GP BJT NPN 80V 0.5A 3-Pin TO-18 |
New Jersey Semiconductor |
| 581 |
2SA1060 |
Silicon PNP epitaxial base mesa transistor, 80V, 5A |
Panasonic |
| 582 |
2SA1208 |
High-Voltage Switching Audio 80W Output Predriver Applications |
SANYO |
| 583 |
2SA1293 |
Trans GP BJT PNP 80V 5A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 584 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
| 585 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 586 |
2SA1880 |
Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) ITO-220 |
New Jersey Semiconductor |
| 587 |
2SA1907 |
Trans GP BJT PNP 80V 10A 3-Pin(3+Tab) TO-3PF |
New Jersey Semiconductor |
| 588 |
2SA1939 |
Trans GP BJT PNP 80V 6A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 589 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 590 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 591 |
2SA770 |
Trans GP BJT PNP 80V 0.5A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 592 |
2SA771 |
Trans GP BJT PNP 80V 0.5A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 593 |
2SA775 |
Trans GP BJT PNP 80V 0.5A 3-Pin TO-92L-A1 |
New Jersey Semiconductor |
| 594 |
2SB1021 |
7A; 30W; V(ceo): 80V; PNP darlington transistor |
TOSHIBA |
| 595 |
2SB1451 |
PNP Epitaxial Planar Silicon Transistors 80V/5A Switching Applications |
SANYO |
| 596 |
2SB1452 |
PNP Epitaxial Planar Silicon Transistors 80V/7A Switching Applications |
SANYO |
| 597 |
2SB1455 |
PNP Epitaxial Planar Silicon Transistors 80V/7A High-Current Switching Applications |
SANYO |
| 598 |
2SB1568 |
Trans Darlington PNP 80V 4A 3-Pin(3+Tab) TO-220FN |
New Jersey Semiconductor |
| 599 |
2SB1607 |
Trans GP BJT PNP 80V 7A |
New Jersey Semiconductor |
| 600 |
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A. |
USHA India LTD |
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