No. |
Part Name |
Description |
Manufacturer |
541 |
2N6491 |
Trans GP BJT PNP 80V 15A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
542 |
2N6491 |
Power 15A 80V Discrete PNP |
ON Semiconductor |
543 |
2N6495 |
Trans GP BJT NPN 80V 10A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
544 |
2N6497 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
545 |
2N6498 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
546 |
2N6499 |
5A high voltage NPN silicon 80W power transistor |
Motorola |
547 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
548 |
2N6530 |
Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
549 |
2N6531 |
Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
550 |
2N6532 |
Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
551 |
2N6533 |
Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
552 |
2N6552 |
Trans GP BJT NPN 80V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
553 |
2N6555 |
Trans GP BJT PNP 80V 1A 3-Pin(3+Tab) TO-202 |
New Jersey Semiconductor |
554 |
2N6650 |
Trans Darlington PNP 80V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
555 |
2N6661 |
MOSPOWER N-Channel Enhancement Mode Transistor 80V 0.28A |
Siliconix |
556 |
2N6661 |
N-Channel 80-V and 90-V (D-S) MOSFETS |
Vishay |
557 |
2N6668 |
Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
558 |
2N6668 |
Power 8A 80V Darlington PNP |
ON Semiconductor |
559 |
2N6707 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
560 |
2N6710 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - hFE |
Continental Device India Limited |
561 |
2N6716 |
0.850W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 80 - hFE |
Continental Device India Limited |
562 |
2N6717 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
563 |
2N6717 |
0.850W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
564 |
2N6717 |
Trans GP BJT NPN 80V 1A 3-Pin TO-92 |
New Jersey Semiconductor |
565 |
2N6718 |
0.850W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
566 |
2N6728 |
0.850W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
567 |
2N6729 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
568 |
2N6729 |
0.850W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
569 |
2N6730 |
0.850W General Purpose PNP Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 80 - hFE |
Continental Device India Limited |
570 |
2N692 |
Thyristor SCR 800V 200A 3-Pin TO-48 Box |
New Jersey Semiconductor |
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