| No. |
Part Name |
Description |
Manufacturer |
| 451 |
BAS70-04 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 452 |
BAS70-05 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 453 |
BAS70-06 |
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 454 |
BAS70-07W |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
Siemens |
| 455 |
BAT20J |
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE |
ST Microelectronics |
| 456 |
BAT20JFILM |
HIGH EFFICIENCY SWITCHING AND ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE |
ST Microelectronics |
| 457 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 458 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 459 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
| 460 |
BBY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 461 |
BBY25 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 462 |
BBY26 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 463 |
BBY27 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 464 |
BC237 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 465 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 466 |
BC238 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 467 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 468 |
BC239 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 469 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 470 |
BC307 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 471 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 472 |
BC308 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 473 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 474 |
BC309 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 475 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 476 |
BC327 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 477 |
BC327 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 478 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 479 |
BC328 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 480 |
BC328 |
PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
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