| No. |
Part Name |
Description |
Manufacturer |
| 541 |
BSX75 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
| 542 |
BSY27 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 543 |
BSY92 |
Silicon NPN planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 544 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 545 |
BSY95A |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 546 |
BUY18S |
Silicon planar epitaxial NPN fast-switching and high voltage transistor |
SGS-ATES |
| 547 |
BXY22 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 548 |
BXY22G |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 549 |
BXY22G |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 550 |
BXY22H |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 551 |
BXY22H |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 552 |
BXY22J |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 553 |
BXY22J |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 554 |
BXY23 |
Depletion-layer varactors for tuning and modulation |
Siemens |
| 555 |
BXY23 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 556 |
BXY24 |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 557 |
BXY24EA |
Junction varactors for tuning and modulation, datasheet in german language |
Siemens |
| 558 |
BXY43B |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 559 |
BXY43C |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 560 |
BXY44E |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 561 |
BXY58EA |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 562 |
BXY59D |
Mirowave PIN Diode for phase shifting and switching applications in the GHz-range |
Siemens |
| 563 |
C0G (NPO) DIELECTRIC, HIGH VOLTAGE |
Monolithic Ceramic Chip Capacitors, High Voltage, Ultra-Stable C0G Dielectric, Low Dissipation Factor, Ideal for Critical Timing and Tuning Applications |
Vishay |
| 564 |
C106A |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 565 |
C106B |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 566 |
C106D |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 567 |
C106M |
Thyristor silicon planar type, low power switching and control applications |
TOSHIBA |
| 568 |
C203A |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
| 569 |
C203B |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
| 570 |
C203C |
THYRISTOR silicon planar type, low power switching and control applications |
TOSHIBA |
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