| No. |
Part Name |
Description |
Manufacturer |
| 511 |
BCV61 |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 512 |
BCV61A |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 513 |
BCV61B |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 514 |
BCV61C |
NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 515 |
BCV62 |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 516 |
BCV62A |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 517 |
BCV62B |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 518 |
BCV62C |
PNP Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) |
Siemens |
| 519 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 520 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 521 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
| 522 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 523 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 524 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
| 525 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 526 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 527 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
| 528 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 529 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 530 |
BD244C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 531 |
BD3401KS2 |
Single Power Supply Sound Processors with Built-in Pre-amp for Tape Recording and Playback |
ROHM |
| 532 |
BD3402KS2 |
Single Power Supply Sound Processors with Built-in Pre-amp for Tape Recording and Playback |
ROHM |
| 533 |
BDX77 |
Medium Power Switching and Amplifier Applications |
Continental Device India Limited |
| 534 |
BFQ74 |
NPN Silicon RF Transistor (For low-noise amplifiers in the GHz range, and broadband analog and digital applications) |
Siemens |
| 535 |
BFQ81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz and broadband analog and digital applications) |
Siemens |
| 536 |
BQ2205L |
POWER MONITORING AND SWITCHING CONTROLLER FOR 3.3V SRAM |
Texas Instruments |
| 537 |
BSX19 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 538 |
BSX20 |
NPN Silicon Planar Transistor for high speed switching and high frequency use |
Newmarket Transistors NKT |
| 539 |
BSX25 |
Silicon NPN planar transistor for switching and RF applications |
AEG-TELEFUNKEN |
| 540 |
BSX72 |
Silicon NPN epitaxial planar transistor for high speed switching and RF amplifier circuits |
AEG-TELEFUNKEN |
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