| No. |
Part Name |
Description |
Manufacturer |
| 481 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
Siemens |
| 482 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
Siemens |
| 483 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
Siemens |
| 484 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 485 |
BF155 |
Epitaxial planar NPN transistor designed for UHF amplifier and mixer-oscillator applications up to 900MHz |
SGS-ATES |
| 486 |
BF2000W |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 487 |
BF2030 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 488 |
BF2030W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 489 |
BF2040 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 490 |
BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) |
Siemens |
| 491 |
BF36931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 492 |
BF36933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 493 |
BF37931E |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 494 |
BF37933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 495 |
BF38931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 496 |
BF38933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 497 |
BF39931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 498 |
BF39933 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 499 |
BF40931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 500 |
BF41931 |
SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
etc |
| 501 |
BF479 |
Epitaxial planar PNP transistor, intended for use as wide band linear amplifier up to 1GHz |
SGS-ATES |
| 502 |
BF516 |
Epitaxial planar PNP transistor, intended as general purpose amplifier and oscillator up to 1GHz |
SGS-ATES |
| 503 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
| 504 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 505 |
BF554 |
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
Siemens |
| 506 |
BF679 |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz |
SGS-ATES |
| 507 |
BF679M |
Epitaxial planar PNP transistor, intended to be used in UHF-VHF range up to 900MHz, low thermal drift |
SGS-ATES |
| 508 |
BF679S |
Epitaxial planar PNP transistor intended for use as UHF-VHF amplifier up to 900MHz |
SGS-ATES |
| 509 |
BF680 |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
| 510 |
BF680A |
Epitaxial planar PNP transistor intended for use in TV varicap tuners as mixer-oscillator stage up to 900MHz |
SGS-ATES |
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