| No. |
Part Name |
Description |
Manufacturer |
| 571 |
BFR380F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
| 572 |
BFR380T |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Phase Noise Oscillators up to 4GHz |
Infineon |
| 573 |
BFR49 |
NPN silicon microwave transistor, suitable for amplifiers up to S-band frequencies |
Philips |
| 574 |
BFR90B |
Epitaxial planar NPN transistor, intended for high-gain, wide band, low noise application up to 1,5GHz |
SGS-ATES |
| 575 |
BFR91 |
Epitaxial planar NPN transistor, designed for VHF-UHF medium level amplifier up to 1.5GHz |
SGS-ATES |
| 576 |
BFR92P |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 577 |
BFR92W |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) |
Siemens |
| 578 |
BFR93AW |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
| 579 |
BFR93P |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 580 |
BFR99 |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 581 |
BFR99A |
Epitaxial planar PNP transistor designed for wide band common-emiter linear amplifier applications up to 1GHz |
SGS-ATES |
| 582 |
BFS17P |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 583 |
BFS17S |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 584 |
BFS17W |
NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
Siemens |
| 585 |
BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA |
Infineon |
| 586 |
BFS360L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 587 |
BFS380L6 |
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package for LNA and VCO Modules up to 4GHz |
Infineon |
| 588 |
BFS386L6 |
RF-Bipolar - NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz |
Infineon |
| 589 |
BFS55 |
NPN transistor for RF applications up to the GHz range |
Siemens |
| 590 |
BFS62 |
Silicon NON epitaxial planar transistor for general applications up to VHF range |
AEG-TELEFUNKEN |
| 591 |
BFT92 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
| 592 |
BFT92 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
| 593 |
BFT92W |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
| 594 |
BFT92W |
PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA) |
Siemens |
| 595 |
BFT93 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 596 |
BFT93 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 597 |
BFT95 |
Epitaxial planar PNP transistor intended for high-gain wide-band applications up to 1.5GHz |
SGS-ATES |
| 598 |
BFT95H |
Epitaxial planar PNP transistor intended for common-emitter, high-gain wide band application up to 1.5Ghz |
SGS-ATES |
| 599 |
BFT96 |
Epitaxial planar PNP transistor intended for use as driver or output stage in MATV application up to 800MHz |
SGS-ATES |
| 600 |
BFW46 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
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