| No. |
Part Name |
Description |
Manufacturer |
| 511 |
BF799 |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 512 |
BF799 |
NPN SILICON RF TRANSISTOR (For linear broadband amplifier applications up to 500 MHz SAW filter driver in TV tuners) |
Siemens |
| 513 |
BF799W |
RF-Bipolar - For linear broadband amplifier application up to 500 MHz and as SAW filter driver in TV tuners |
Infineon |
| 514 |
BF799W |
NPN Silicon RF Transistor (For linear broadband amplifier applications up to 500MHz SAW filter driver in TV tuners) |
Siemens |
| 515 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
| 516 |
BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 517 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
| 518 |
BFG135A |
RF-Bipolar - For low-distortion broadband amplifier stages up to 2GHz, Power amplifiers in DECT and PCN systems |
Infineon |
| 519 |
BFG193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 520 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 521 |
BFG196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 522 |
BFG19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 523 |
BFG23 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
| 524 |
BFG235 |
RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz |
Infineon |
| 525 |
BFG32 |
Silicon planar epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
| 526 |
BFG51 |
Silicon-epitaxial PNP wideband (up to 2GHz) transistor |
Philips |
| 527 |
BFG90A |
Silicon planar epitaxial NPN transistor, designed for wideband application in CATV and MATV systems up to 2GHz |
Philips |
| 528 |
BFG96 |
Silicon planar epitaxial NPN transistor wideband application up to 2GHz |
Philips |
| 529 |
BFP193 |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 530 |
BFP193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 531 |
BFP193W |
RF-Bipolar - For low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers |
Infineon |
| 532 |
BFP193W |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 533 |
BFP194 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) |
Siemens |
| 534 |
BFP196 |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 535 |
BFP196W |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz |
Infineon |
| 536 |
BFP360W |
RF-Bipolar - NPN Silicon RF transistor in 4pin SOT343 package ideal for Oscillators and VCOs up to 4GHz |
Infineon |
| 537 |
BFP405 |
NPN Silicon RF Transistor (For low current applications For oscillators up to 12 GHz) |
Siemens |
| 538 |
BFP420 |
NPN Silicon RF Transistor (For high gain low noise amplifiers For oscillators up to 10 GHz) |
Siemens |
| 539 |
BFP81 |
NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
Siemens |
| 540 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
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