No. |
Part Name |
Description |
Manufacturer |
511 |
2SC1590 |
Silicon NPN Transistor RF Power Output |
Unknow |
512 |
2SC3198L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
513 |
2SC3199 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
514 |
2SC3199L |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Unknow |
515 |
2SC3200 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
516 |
2SC3201 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
517 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
518 |
2SC3202 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
519 |
2SC3203 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
520 |
2SC3206 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) |
Korea Electronics (KEC) |
521 |
2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications |
TOSHIBA |
522 |
2SC3733 |
NPN transistor for power amplifier and high speed switching applications |
NEC |
523 |
2SC388ATM |
Silicon NPN transistor for TV final picture IF amplifier applications |
TOSHIBA |
524 |
3003 |
3.0GHz 3.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
525 |
3005 |
3.0GHz 5.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
526 |
3135-14 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
527 |
3135-25 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
528 |
3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
529 |
3135-35 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
530 |
3135-45 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
531 |
3135-7 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
532 |
40235 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
533 |
40236 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
534 |
40237 |
NPN Transistor - RF AMPS and Oscillator |
National Semiconductor |
535 |
40238 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
536 |
40239 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
537 |
40240 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
538 |
40242 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
539 |
40243 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
540 |
40244 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
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