| No. |
Part Name |
Description |
Manufacturer |
| 541 |
40245 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
| 542 |
40246 |
NPN Transistor - RF AMPS and Oscillators |
National Semiconductor |
| 543 |
5962F9764101VEA |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 544 |
5962F9764101VEC |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 545 |
5962F9764101VXC |
Radiation Hardened Ultra High Frequency NPN Transistor Array |
Intersil |
| 546 |
71T2 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 547 |
72T2 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 548 |
73T2 |
Power NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 549 |
74T2 |
Power NPN transistor NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 550 |
74T2 |
Power NPN transistor NPN transistor Epitaxial Planar - Fast switching |
SESCOSEM |
| 551 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 552 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 553 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 554 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 555 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 556 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 557 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 558 |
83000 |
3.0GHz 0.5W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 559 |
83001 |
3.0GHz 1.0W 28V microwave power NPN transistor for class C applications |
SGS Thomson Microelectronics |
| 560 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 561 |
AC183 |
Ge-ALLOY-npn TRANSISTOR are intended for use in low frequency preamplifier an driver stages |
IPRS Baneasa |
| 562 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 563 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 564 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 565 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 566 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 567 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 568 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 569 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 570 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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