| No. |
Part Name |
Description |
Manufacturer |
| 571 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 572 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 573 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 574 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 575 |
AM82931-055 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 576 |
AM82931-055N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 577 |
AM82931-055S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 578 |
AM83135-003 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 579 |
B772 |
EPITAXIAL PLANAR NPN TRANSISTOR (AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING) |
Korea Electronics (KEC) |
| 580 |
BC107A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
| 581 |
BC107A |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 582 |
BC107B |
Si-PLANAR-npn TRANSISTOR h21E=β=150 >65 |
IPRS Baneasa |
| 583 |
BC107B |
NPN transistor for general purpose audio amplifiers, collector-emitter=45V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 584 |
BC108A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
| 585 |
BC108A |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 180 |
SGS Thomson Microelectronics |
| 586 |
BC108B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 587 |
BC108C |
Si-PLANAR-npn TRANSISTOR h21E=β=270 >100 |
IPRS Baneasa |
| 588 |
BC108C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 589 |
BC109B |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 290 |
SGS Thomson Microelectronics |
| 590 |
BC109C |
Si-PLANAR-npn TRANSISTOR h21E=β=270 >100 |
IPRS Baneasa |
| 591 |
BC109C |
NPN transistor for general purpose audio amplifiers, collector-emitter=20V, collector current=0.1A, hFE= 520 |
SGS Thomson Microelectronics |
| 592 |
BC115 |
Silicon planar NPN transistor - audio driver |
SGS-ATES |
| 593 |
BC125 |
Silicon planar NPN transistor for audio drivers |
SGS-ATES |
| 594 |
BC125B |
Silicon planar NPN transistor for audio drivers |
SGS-ATES |
| 595 |
BC170A |
Si-PLANAR-npn TRANSISTOR h21E=β=30...100 at 1mA |
IPRS Baneasa |
| 596 |
BC170B |
Si-PLANAR-npn TRANSISTOR h21E=β=60...250 at 1mA |
IPRS Baneasa |
| 597 |
BC170C |
Si-PLANAR-npn TRANSISTOR h21E=β=150...600 at 1mA |
IPRS Baneasa |
| 598 |
BC171A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
| 599 |
BC172A |
Si-PLANAR-npn TRANSISTOR h21E=β=90 >40 |
IPRS Baneasa |
| 600 |
BC172C |
Si-PLANAR-npn TRANSISTOR h21E=β=270 >100 |
IPRS Baneasa |
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