| No. |
Part Name |
Description |
Manufacturer |
| 541 |
IRFR9022 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
| 542 |
IRFU9020 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
| 543 |
IRFU9022 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
International Rectifier |
| 544 |
IRHM3160 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
International Rectifier |
| 545 |
IRHM4160 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
International Rectifier |
| 546 |
IRS2003 |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 547 |
IRS2003SPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 548 |
IRS2004 |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 549 |
IRS2004SPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 550 |
IRS2004STRPBF |
Half Bridge Driver, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels |
International Rectifier |
| 551 |
IRS2304 |
Half Bridge Driver, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels |
International Rectifier |
| 552 |
IRS2304SPBF |
Half Bridge Driver, high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels |
International Rectifier |
| 553 |
IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. |
International Rectifier |
| 554 |
IRS2607DSPBF |
High voltage, high speed power MOSFET and IGBT driver with independent high side and low side referenced output channels |
International Rectifier |
| 555 |
IRS2608DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 556 |
IRS2609DSPBF |
High voltage, high speed power MOSFET and IGBT driver with dependent high side and low side referenced output channels |
International Rectifier |
| 557 |
ISL6534 |
Dual PWM Controller and LDO Regulator 2%; DDR or Independent Mode; Freq = 300kHz nominal (adjustable 100 to 1000kHz) |
Intersil |
| 558 |
ISL97686 |
4-Channel LED Driver with Independent Channel Control for Dynamic Dimming |
Intersil |
| 559 |
ISL97691 |
2.4V LED Driver with Independent Analog and PWM Dimming Controls of 2 Backlights for 3D Application |
Intersil |
| 560 |
K4R271669A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 561 |
K4R271669A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 562 |
K4R271669A-NB(M)CCG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 563 |
K4R271669AM-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 564 |
K4R271669AM-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 565 |
K4R271669AM-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 566 |
K4R271669AN-CG6 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. |
Samsung Electronic |
| 567 |
K4R271669AN-CK7 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 568 |
K4R271669AN-CK8 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 569 |
K4R441869A-N(M)CG6 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 570 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
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