| No. |
Part Name |
Description |
Manufacturer |
| 571 |
K4R441869A-N(M)CK7 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 572 |
K4R441869A-N(M)CK8 |
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 573 |
K4R441869AM-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 574 |
K4R441869AM-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 575 |
K4R441869AM-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 576 |
K4R441869AN-CG6 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. |
Samsung Electronic |
| 577 |
K4R441869AN-CK7 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. |
Samsung Electronic |
| 578 |
K4R441869AN-CK8 |
256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. |
Samsung Electronic |
| 579 |
K4R881869 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 580 |
K4R881869M-NBCCG6 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 581 |
K4R881869M-NCK7 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 582 |
K4R881869M-NCK8 |
288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 583 |
KBL403 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 4.0 A. |
Shanghai Sunrise Electronics |
| 584 |
KBP005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 2.0 A. |
Shanghai Sunrise Electronics |
| 585 |
KBPC10005 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 586 |
KBPC1001 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 587 |
KBPC1002 |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 10.0 A. |
Shanghai Sunrise Electronics |
| 588 |
KBPC15005W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 589 |
KBPC1501W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 590 |
KBPC1502W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 591 |
KBPC1504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 592 |
KBPC1506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 593 |
KBPC1508W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 594 |
KBPC1510W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
| 595 |
KBPC25005W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 596 |
KBPC2501W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 597 |
KBPC2502W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 598 |
KBPC2504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 599 |
KBPC2506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 600 |
KBPC2508W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
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