| No. |
Part Name |
Description |
Manufacturer |
| 601 |
KBPC2510W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
| 602 |
KBPC35005W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 50 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 603 |
KBPC3501W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 100 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 604 |
KBPC3502W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 605 |
KBPC3504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 606 |
KBPC3506W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 600 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 607 |
KBPC3508W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 800 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 608 |
KBPC3510W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 1000 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
| 609 |
KDV804 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT) |
Korea Electronics (KEC) |
| 610 |
KM416RD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 611 |
KM416RD16AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 612 |
KM416RD16AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 613 |
KM416RD16C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 614 |
KM416RD2AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 615 |
KM416RD2AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 616 |
KM416RD2C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 617 |
KM416RD2D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 618 |
KM416RD32AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 619 |
KM416RD32AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 620 |
KM416RD32C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 621 |
KM416RD32D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 622 |
KM416RD4AC |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 623 |
KM416RD4AD |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 624 |
KM416RD4C |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 625 |
KM416RD4D |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 626 |
KM416RD8AC(D)-RK70 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 627 |
KM416RD8AC(D)-RK80 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 628 |
KM416RD8AC(DB)-RCG60 |
128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
Samsung Electronic |
| 629 |
KM416RD8AC-RG60 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). |
Samsung Electronic |
| 630 |
KM416RD8AC-RK70 |
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). |
Samsung Electronic |
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