| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2N5108 |
Trans GP BJT NPN 20V 0.4A 3-Pin TO-39 |
New Jersey Semiconductor |
| 572 |
2N5109 |
Trans GP BJT NPN 20V 0.4A 3-Pin TO-39 |
New Jersey Semiconductor |
| 573 |
2N5237 |
Trans GP BJT NPN 120V 10A 3-Pin TO-5 |
New Jersey Semiconductor |
| 574 |
2N5400 |
0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE |
Continental Device India Limited |
| 575 |
2N5400 |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 576 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 577 |
2N540A |
Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box |
New Jersey Semiconductor |
| 578 |
2N5630 |
Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. |
General Electric Solid State |
| 579 |
2N5630 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 580 |
2N5630 |
Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 581 |
2N5633 |
Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 582 |
2N5672 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 583 |
2N5672MP |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 584 |
2N5672S |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 585 |
2N5680 |
10.000W High Voltage PNP Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 586 |
2N5680 |
Trans GP BJT PNP 120V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 587 |
2N5682 |
10.000W High Voltage NPN Metal Can Transistor. 120V Vceo, 1.000A Ic, 5 hFE. |
Continental Device India Limited |
| 588 |
2N5682 |
Trans GP BJT NPN 120V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 589 |
2N5910 |
Trans GP BJT PNP 20V 0.05A |
New Jersey Semiconductor |
| 590 |
2N5913 |
Trans GP BJT PNP 20V 0.05A |
New Jersey Semiconductor |
| 591 |
2N5932 |
1.5 Watt hermetically sealed glass silicon zener diode 20V |
Motorola |
| 592 |
2N5951 |
1.5 Watt hermetically sealed glass silicon zener diode 120V |
Motorola |
| 593 |
2N6030 |
Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits |
Motorola |
| 594 |
2N6030 |
Trans GP BJT PNP 120V 16A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
| 595 |
2N6065 |
Germanium 10A power transistor 56W 120V |
Motorola |
| 596 |
2N6227 |
6A, high-voltage, high-power PNP silicon transistor 150W 120V |
Motorola |
| 597 |
2N6227 |
Trans GP BJT PNP 120V 10A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 598 |
2N6230 |
Trans GP BJT PNP 120V 15A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 599 |
2N6279 |
50A High-power NPN silicon transistor 120V 250W |
Motorola |
| 600 |
2N6339 |
Trans GP BJT NPN 120V 30A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
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