| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2SK1117 |
V(dss): 600V; V(dgr): 600V; V(gss): +-20V; I(d): 6A; P(d): 100W; n-MOS II |
TOSHIBA |
| 692 |
2SK1257 |
V(dss): 60V; V(gss): +-20V; silicon N-channel power F-MOS FET. For DC-DC converter, no contact relay, solenoid drive, motor drive |
Panasonic |
| 693 |
2SK1259 |
V(dss): 60V; V(gss): +-20V; silicon N-channel power F-MOS FET. For DC-DC converter, no contact relay, solenoid drive, motor drive |
Panasonic |
| 694 |
2SK241GR |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 695 |
2SK241O |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 696 |
2SK241Y |
N-channel MOS transistor for FM tuner, VHF and RF amplifier applications, 20V, 30mA |
TOSHIBA |
| 697 |
2SK596A |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 698 |
2SK596B |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 699 |
2SK596C |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 700 |
2SK596D |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 701 |
2SK596E |
V(gdo): -20V; I(g): 10mA; 100mW; capacitor microphone application |
SANYO |
| 702 |
3.0SMCJ120 |
3000W voltage supressor, 120V |
MEI |
| 703 |
3.0SMCJ120A |
3000W voltage supressor, 120V |
MEI |
| 704 |
30KP120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 705 |
30KP120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 706 |
30KP120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 707 |
30KP120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 708 |
30KP220 |
Diode TVS Single Uni-Dir 220V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 709 |
30KP220A |
Diode TVS Single Uni-Dir 220V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 710 |
30KP220C |
Diode TVS Single Bi-Dir 220V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 711 |
30KP220CA |
Diode TVS Single Bi-Dir 220V 30KW 2-Pin Case 5A |
New Jersey Semiconductor |
| 712 |
30KP320A |
Diode TVS Single Uni-Dir 320V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 713 |
30KP320CA |
Diode TVS Single Bi-Dir 320V 30KW 2-Pin Case D-6 |
New Jersey Semiconductor |
| 714 |
30KPA120 |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 715 |
30KPA120A |
Diode TVS Single Uni-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 716 |
30KPA120C |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 717 |
30KPA120CA |
Diode TVS Single Bi-Dir 120V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 718 |
30KPA220 |
Diode TVS Single Uni-Dir 220V 30KW 2-Pin |
New Jersey Semiconductor |
| 719 |
30KPA220A |
Diode TVS Single Uni-Dir 220V 30KW 2-Pin |
New Jersey Semiconductor |
| 720 |
30KPA220C |
Diode TVS Single Uni-Dir 220V 30KW 2-Pin |
New Jersey Semiconductor |
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