| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2SA1357 |
Trans GP BJT PNP 20V 5A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 632 |
2SA1358 |
Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
New Jersey Semiconductor |
| 633 |
2SA1398 |
900mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC3580 |
Isahaya Electronics Corporation |
| 634 |
2SA1798 |
PNP Epitaxial Planar Silicon Transistors 20V/8A Switching Applications |
SANYO |
| 635 |
2SA1823 |
PNP Epitaxial Planar Silicon Transistor 20V/8A Switching Applications |
SANYO |
| 636 |
2SA1854 |
PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications |
SANYO |
| 637 |
2SA1908 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PF |
New Jersey Semiconductor |
| 638 |
2SA1940 |
Trans GP BJT PNP 120V 8A 3-Pin(3+Tab) TO-3PN |
New Jersey Semiconductor |
| 639 |
2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 |
Isahaya Electronics Corporation |
| 640 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 641 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 642 |
2SA747 |
120V PNP silicon transistor |
Sanken |
| 643 |
2SA839 |
Trans GP BJT PNP 20V 0.03A 3-Pin TO-92 |
New Jersey Semiconductor |
| 644 |
2SA941 |
120V PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 645 |
2SA970 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 646 |
2SA971 |
Trans GP BJT PNP 120V 0.1A 3-Pin TO-92 |
New Jersey Semiconductor |
| 647 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 648 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 649 |
2SB1127 |
PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications |
SANYO |
| 650 |
2SB1140 |
PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications |
SANYO |
| 651 |
2SB1302 |
Bipolar Transistor, -20V, -5A, Low VCE(sat) PNP Single PCP |
ON Semiconductor |
| 652 |
2SB1340 |
Power Transistor (120V/ -6A) |
ROHM |
| 653 |
2SB1436 |
Low Frequency Transistor(-20V/-5A) |
ROHM |
| 654 |
2SB156A |
Germanium PNP Transistor Alloyed Junction Vcbo=-20V, Vebo=-6V, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
| 655 |
2SB1604 |
Trans GP BJT PNP 20V 10A |
New Jersey Semiconductor |
| 656 |
2SB631 |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 657 |
2SB631K |
PNP Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications |
SANYO |
| 658 |
2SB688 |
POWER TRANSISTORS(8A,120V,80W) |
MOSPEC Semiconductor |
| 659 |
2SC1674 |
TV PIF amplifier, FM tuner RF amplifier, mixer, occillator. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 20mA. |
USHA India LTD |
| 660 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| | | |
