| No. |
Part Name |
Description |
Manufacturer |
| 571 |
2N6725 |
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS |
Diodes |
| 572 |
2N6726 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 573 |
2N6726 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 574 |
2N6727 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 575 |
2N6727 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 576 |
2N6728 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 577 |
2N6728 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 578 |
2N6729 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 579 |
2N6729 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 580 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Diodes |
| 581 |
2N6730 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS |
Zetex Semiconductors |
| 582 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
| 583 |
2N6731 |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 584 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Diodes |
| 585 |
2N6732 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR |
Zetex Semiconductors |
| 586 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 587 |
2N696 |
Silicon n-p-n medium power transistor |
Mullard |
| 588 |
2N697 |
Silicon n-p-n medium power transistor |
Mullard |
| 589 |
2N7000 |
Medium Power MOSFETS |
Micro Commercial Components |
| 590 |
2N731 |
NPN silicon transistor medium power, audio-frequency applications in industrial service |
Motorola |
| 591 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 592 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 593 |
2SA1224 |
PNP medium power microwave transistor (This datasheet of the NE90115 is also the datasheet of 2SA1224, see the Electrical Characteristics table) |
NEC |
| 594 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 595 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 596 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 597 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 598 |
2SA1515 |
Medium Power Transistor |
ROHM |
| 599 |
2SA1727 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
| 600 |
2SA1759 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) |
ROHM |
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