| No. |
Part Name |
Description |
Manufacturer |
| 601 |
2N5814 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 602 |
2N5815 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 603 |
2N5816 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 604 |
2N5817 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 605 |
2N5818 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 606 |
2N5819 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 607 |
2N5820 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 608 |
2N5821 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 609 |
2N5822 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 610 |
2N5823 |
SILICON AF MEDIUM POWER TRANSISTOR |
Micro Electronics |
| 611 |
2N6034 |
W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
| 612 |
2N6034 |
PNP medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
| 613 |
2N6034 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 614 |
2N6034 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
| 615 |
2N6035 |
PNP medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
| 616 |
2N6035 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 617 |
2N6035 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
| 618 |
2N6036 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. |
Continental Device India Limited |
| 619 |
2N6036 |
Silicon epitaxial-base PNP medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 620 |
2N6037 |
40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 621 |
2N6037 |
NPN medium power darlington transistor, 4A , 40V |
SGS Thomson Microelectronics |
| 622 |
2N6037 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 623 |
2N6037 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
| 624 |
2N6038 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. |
Continental Device India Limited |
| 625 |
2N6038 |
NPN medium power darlington transistor, 4A , 60V |
SGS Thomson Microelectronics |
| 626 |
2N6038 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 627 |
2N6038 |
MIDIUM POWER DAR;OMGTONS |
ST Microelectronics |
| 628 |
2N6039 |
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. |
Continental Device India Limited |
| 629 |
2N6039 |
Silicon epitaxial-base NPN medium power transistor in monolithic Darlington configuration |
SGS-ATES |
| 630 |
2N6098 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
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