| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N6099 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 632 |
2N6099 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 633 |
2N6100 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 634 |
2N6101 |
75.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 10.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 635 |
2N6101 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 636 |
2N6101 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 637 |
2N6102 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 638 |
2N6103 |
Single diffused hometaxial silicon NPN medium power transistor |
SGS-ATES |
| 639 |
2N6103 |
Silicon HOMETAXIAL NPN transistor, medium power linear and switching applications |
SGS-ATES |
| 640 |
2N6107 |
40.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 2 hFE. |
Continental Device India Limited |
| 641 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 642 |
2N6111 |
40.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
| 643 |
2N6121 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 644 |
2N6121 |
40.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 10 hFE. |
Continental Device India Limited |
| 645 |
2N6121 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 646 |
2N6122 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 647 |
2N6122 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 648 |
2N6122 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 649 |
2N6123 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 650 |
2N6123 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 651 |
2N6123 |
Silicon epitaxial-base NPN medium power transistor |
SGS-ATES |
| 652 |
2N6124 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 653 |
2N6124 |
40.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 654 |
2N6124 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 655 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 656 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 657 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
| 658 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
| 659 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 660 |
2N6126 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
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