| No. |
Part Name |
Description |
Manufacturer |
| 6211 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
| 6212 |
2N3903 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 6213 |
2N3903 |
npn epitaxial silicon transistor |
Samsung Electronic |
| 6214 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6215 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6216 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6217 |
2N3904 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
| 6218 |
2N3904 |
Switching Transistor |
Korea Electronics (KEC) |
| 6219 |
2N3904 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 6220 |
2N3904 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 6221 |
2N3904 |
SMALL SIGNAL NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 6222 |
2N3904 |
SMALL SIGNAL NPN TRANSISTOR |
ST Microelectronics |
| 6223 |
2N3904 |
60 V, NPN small signal transistor |
TRANSYS Electronics Limited |
| 6224 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6225 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6226 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6227 |
2N3904-AP |
SMALL SIGNAL NPN TRANSISTOR |
SGS Thomson Microelectronics |
| 6228 |
2N3904-AP |
SMALL SIGNAL NPN TRANSISTOR |
ST Microelectronics |
| 6229 |
2N3904C |
Switching Transistor |
Korea Electronics (KEC) |
| 6230 |
2N3904S |
Switching Transistor |
Korea Electronics (KEC) |
| 6231 |
2N3904SC |
Switching Transistor |
Korea Electronics (KEC) |
| 6232 |
2N3904U |
Switching Transistor |
Korea Electronics (KEC) |
| 6233 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 6234 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 6235 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6236 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 6237 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 6238 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 6239 |
2N3906 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 6240 |
2N3906 |
Switching Transistor |
Korea Electronics (KEC) |
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