| No. |
Part Name |
Description |
Manufacturer |
| 6301 |
2N4123 |
Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. |
General Electric Solid State |
| 6302 |
2N4123 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 6303 |
2N4123 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6304 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6305 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6306 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6307 |
2N4124 |
Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. |
General Electric Solid State |
| 6308 |
2N4124 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
Micro Electronics |
| 6309 |
2N4124 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6310 |
2N4124 |
25 V, NPN small signal transistor |
TRANSYS Electronics Limited |
| 6311 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6312 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6313 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6314 |
2N4125 |
Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. |
General Electric Solid State |
| 6315 |
2N4125 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6316 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6317 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6318 |
2N4125 |
Amplifier transistor. Collector-emitter voltage: Vceo = -30V. Collector-base voltage: Vcbo = -30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6319 |
2N4126 |
Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. |
General Electric Solid State |
| 6320 |
2N4126 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 6321 |
2N4126 |
25 V, PNP small signal transistor |
TRANSYS Electronics Limited |
| 6322 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6323 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6324 |
2N4126 |
Amplifier transistor. Collector-emitter voltage: Vceo = -25V. Collector-base voltage: Vcbo = -25V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6325 |
2N4144 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6326 |
2N4145 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6327 |
2N4146 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6328 |
2N4147 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6329 |
2N4148 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6330 |
2N4149 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
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