| No. |
Part Name |
Description |
Manufacturer |
| 6361 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6362 |
2N4401SC |
EPITAXIAL PLANAR NPN TRANSISTOR |
Korea Electronics (KEC) |
| 6363 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 6364 |
2N4402 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 6365 |
2N4402 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 6366 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6367 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6368 |
2N4402 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6369 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 6370 |
2N4403 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 6371 |
2N4403 |
PNP Epitaxial Silicon Transistor |
Samsung Electronic |
| 6372 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6373 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6374 |
2N4403 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6375 |
2N4403SC |
EPITAXIAL PLANAR PNP TRANSISTOR |
Korea Electronics (KEC) |
| 6376 |
2N4416 |
N-CHANNEL FET |
Micro Electronics |
| 6377 |
2N4416A |
N-CHANNEL FET |
Micro Electronics |
| 6378 |
2N4424 |
Planar epitaxial passivated NPN silicon transistor. 40V, 500mA. |
General Electric Solid State |
| 6379 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 6380 |
2N4427 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
| 6381 |
2N4429 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 6382 |
2N4430 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 6383 |
2N4431 |
Microwave Power NPN Transistor for CLASS C applications |
SGS Thomson Microelectronics |
| 6384 |
2N4440 |
Wideband VHF-UHF class C NPN transistor |
SGS Thomson Microelectronics |
| 6385 |
2N4870 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
| 6386 |
2N4871 |
Silicon unijunction transistor. 30V, 50mA. |
General Electric Solid State |
| 6387 |
2N4878 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 6388 |
2N4879 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 6389 |
2N4880 |
Dielectrically Isolated Monolithic Dual NPN General Purpose Amplifier |
Intersil |
| 6390 |
2N4898 |
Silicon P-N-P medium power transistor. 40V, 25W. |
General Electric Solid State |
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