| No. |
Part Name |
Description |
Manufacturer |
| 6331 |
2N4234 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6332 |
2N4235 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6333 |
2N4237 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6334 |
2N4238 |
SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 6335 |
2N4240 |
High-voltage silicon N-P-N transistor. |
General Electric Solid State |
| 6336 |
2N4273 |
NPN Medium Power (up to 25 Watts) silicon transistor |
Transitron Electronic |
| 6337 |
2N4276 |
Germanium Power Transistors |
GPD Optoelectronic Devices |
| 6338 |
2N4314 |
Medium power silicon N-P-N planar transistor. |
General Electric Solid State |
| 6339 |
2N4332 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6340 |
2N4333 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6341 |
2N4334 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6342 |
2N4335 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6343 |
2N4336 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6344 |
2N4337 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
| 6345 |
2N4347 |
High voltage silicon N-P-N transistor. 140V, 100W. |
General Electric Solid State |
| 6346 |
2N4348 |
HIGH VOLTAGE, HIGH CURRENT POWER TRANSISTORS |
General Electric Solid State |
| 6347 |
2N4387 |
PNP Silicon Medium Power Transistor (up to 25 watts) |
Transitron Electronic |
| 6348 |
2N4388 |
PNP Silicon Medium Power Transistor (up to 25 watts) |
Transitron Electronic |
| 6349 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 6350 |
2N4400 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 6351 |
2N4400 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 6352 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6353 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6354 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6355 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 6356 |
2N4401 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 6357 |
2N4401 |
NPN Epitaxial Silicon Transistor |
Samsung Electronic |
| 6358 |
2N4401 |
TO-92 Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
| 6359 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 6360 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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