| No. |
Part Name |
Description |
Manufacturer |
| 631 |
2N2156 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 632 |
2N2157 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 633 |
2N2158 |
PNP germanium power transistor for high-power, high-gain applications in high-reliability industrial equipment |
Motorola |
| 634 |
2N2160 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 635 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 636 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 637 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 638 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 639 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 640 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 641 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 642 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 643 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 644 |
2N2646 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 645 |
2N2647 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 646 |
2N2800 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 647 |
2N2801 |
PNP silicon annular transistor for medium-speed switching applications TO-5 case |
Motorola |
| 648 |
2N2837 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 649 |
2N2838 |
PNP silicon annular transistor for medium-speed switching applications TO-18 case |
Motorola |
| 650 |
2N2857 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz |
SGS-ATES |
| 651 |
2N2904 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 652 |
2N2904 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 653 |
2N2904A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 654 |
2N2904A |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 655 |
2N2905 |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 656 |
2N2905 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 657 |
2N2905A |
Silicon PNP epitaxial planar transistor for high speed switching applications and amplifier circuits |
AEG-TELEFUNKEN |
| 658 |
2N2905A |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 659 |
2N2906 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 660 |
2N2906 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
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