| No. |
Part Name |
Description |
Manufacturer |
| 661 |
2N2906A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 662 |
2N2906A |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 663 |
2N2907 |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 664 |
2N2907 |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 665 |
2N2907A |
Silicon PNP epitaxial planar transistors for high speed switching applications and for amplifier circuits |
AEG-TELEFUNKEN |
| 666 |
2N2907A |
Silicon transistor for switching applications PNP |
IPRS Baneasa |
| 667 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 668 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 669 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 670 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 671 |
2N3055 |
Silicon diffused mesa NPN power transistor for high power switching applications and AF amplifiers |
AEG-TELEFUNKEN |
| 672 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 673 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 674 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 675 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 676 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 677 |
2N3479 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 678 |
2N3480 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 679 |
2N3481 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 680 |
2N3483 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 681 |
2N3484 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 682 |
2N3510 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 683 |
2N3511 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 684 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 685 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
| 686 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 687 |
2N3647 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 688 |
2N3648 |
NPN silicon transistor for high-speed saturated switching applications to 500mA |
Motorola |
| 689 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 690 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
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