| No. |
Part Name |
Description |
Manufacturer |
| 691 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
| 692 |
2N3818 |
NPN silicon transistor for high-frequency power applications to 150 MHz |
Motorola |
| 693 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 694 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 695 |
2N3924 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 696 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
| 697 |
2N3925 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 698 |
2N3926 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 699 |
2N3927 |
NPN silicon RF power transistor, optimized for large-signal power-amplifier and driver applications to 300 MHz |
Motorola |
| 700 |
2N3948 |
NPN silicon RF power transistor, ideal for CATV applications or military and industrial equipment |
Motorola |
| 701 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 702 |
2N3980 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 703 |
2N4199 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 704 |
2N4200 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 705 |
2N4201 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 706 |
2N4202 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 707 |
2N4203 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 708 |
2N4204 |
Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment |
Motorola |
| 709 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 710 |
2N464 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 711 |
2N465 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 712 |
2N466 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 713 |
2N467 |
PNP germanium transistor for applications in the audio-frequency range |
Motorola |
| 714 |
2N4947 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 715 |
2N4948 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 716 |
2N4949 |
UNIJUNCTIONS TRANSISTOR |
CCSIT-CE |
| 717 |
2N499 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 718 |
2N499A |
MADT® PNP communications types - germanium transistor |
Sprague |
| 719 |
2N502 |
MADT® PNP communications types - germanium transistor |
Sprague |
| 720 |
2N502A |
MADT® PNP communications types - germanium transistor |
Sprague |
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