No. |
Part Name |
Description |
Manufacturer |
661 |
2N6677 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
662 |
2N6678 |
15 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
663 |
2N6686 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
664 |
2N6687 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
665 |
2N6688 |
25 A SwitchMax power transistor. N-P-N type. |
General Electric Solid State |
666 |
2N6702 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
667 |
2N6703 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
668 |
2N6704 |
High-current silicon N-P-N VERSAWATT transistor. |
General Electric Solid State |
669 |
2N6751 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
670 |
2N6752 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
671 |
2N6753 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
672 |
2N6754 |
5 A SwitchMax power transistor. High voltage N-P-N type. |
General Electric Solid State |
673 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
674 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
675 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
676 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
677 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
678 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
679 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
680 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
681 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
682 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
683 |
2N6782 |
N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. |
General Electric Solid State |
684 |
2N6788 |
N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. |
General Electric Solid State |
685 |
2N6796 |
N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. |
General Electric Solid State |
686 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
687 |
2N681 |
Thyristor Controlled-rectifier |
RCA Solid State |
688 |
2N682 |
25A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
689 |
2N682 |
Thyristor Controlled-rectifier |
RCA Solid State |
690 |
2N683 |
25A silicon controlled rectifier. Vrsom 150V. |
General Electric Solid State |
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