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Datasheets for LID STA

Datasheets found :: 4666
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No. Part Name Description Manufacturer
661 2N6677 15 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
662 2N6678 15 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
663 2N6686 25 A SwitchMax power transistor. N-P-N type. General Electric Solid State
664 2N6687 25 A SwitchMax power transistor. N-P-N type. General Electric Solid State
665 2N6688 25 A SwitchMax power transistor. N-P-N type. General Electric Solid State
666 2N6702 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
667 2N6703 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
668 2N6704 High-current silicon N-P-N VERSAWATT transistor. General Electric Solid State
669 2N6751 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
670 2N6752 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
671 2N6753 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
672 2N6754 5 A SwitchMax power transistor. High voltage N-P-N type. General Electric Solid State
673 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
674 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
675 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
676 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
677 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
678 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
679 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
680 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
681 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
682 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
683 2N6782 N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V. General Electric Solid State
684 2N6788 N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V. General Electric Solid State
685 2N6796 N-channel enhancement-mode power field-effect transistor. 8.0 A, 100V. General Electric Solid State
686 2N681 25A silicon controlled rectifier. Vrsom 35V. General Electric Solid State
687 2N681 Thyristor Controlled-rectifier RCA Solid State
688 2N682 25A silicon controlled rectifier. Vrsom 75V. General Electric Solid State
689 2N682 Thyristor Controlled-rectifier RCA Solid State
690 2N683 25A silicon controlled rectifier. Vrsom 150V. General Electric Solid State


Datasheets found :: 4666
Page: | 19 | 20 | 21 | 22 | 23 | 24 | 25 | 26 | 27 |



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