No. |
Part Name |
Description |
Manufacturer |
601 |
2N6388 |
10 A N-P-N darlington power transistor. 80 V. 65 W. Gain of 1000 at 5 A. |
General Electric Solid State |
602 |
2N6389 |
UHF/MATV Low-Noise Silicon NPN RF transistor |
RCA Solid State |
603 |
2N6390 |
2-GHz, Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
604 |
2N6391 |
5W, 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
605 |
2N6392 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
606 |
2N6393 |
10W 2GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
607 |
2N6394 |
12A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
608 |
2N6395 |
12A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
609 |
2N6396 |
12A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
610 |
2N6397 |
12A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
611 |
2N6398 |
12A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
612 |
2N6400 |
16A silicon controlled rectifier. Vrsom 75V. |
General Electric Solid State |
613 |
2N6401 |
16A silicon controlled rectifier. Vrsom 125V. |
General Electric Solid State |
614 |
2N6402 |
16A silicon controlled rectifier. Vrsom 250V. |
General Electric Solid State |
615 |
2N6403 |
16A silicon controlled rectifier. Vrsom 450V. |
General Electric Solid State |
616 |
2N6404 |
16A silicon controlled rectifier. Vrsom 650V. |
General Electric Solid State |
617 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
618 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
619 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
620 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
621 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
622 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
623 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
624 |
2N6473 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 110V. |
General Electric Solid State |
625 |
2N6474 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 130V. |
General Electric Solid State |
626 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
627 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
628 |
2N6477 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
629 |
2N6478 |
MEDIUM POWER SILICON NPN TRANSISTORS |
General Electric Solid State |
630 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
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